most citedDecoupling of epitaxy related trapping effects in AlGaN/GaN metal-insulator semiconductor high electron mobility transistors

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cond-mat.mtrl-sci2020★ 1 cited

Decoupling of epitaxy related trapping effects in AlGaN/GaN metal-insulator semiconductor high electron mobility transistors

M. Huber, G. Pozzovivo, I. Daumiller +5

The decoupling of epitaxial factors influencing on the dynamic instabilities of AlGaN/GaN metal-insulator semiconductor high electron mobility transistors is investigated. Three di…