7 papers
A high-mobility hole bilayer in a germanium double quantum well
A. Tosato, B. M. Ferrari, A. Sammak +4
We design, fabricate, and study a hole bilayer in a strained germanium double quantum well. Magnetotransport characterisation of double quantum well field-effect transistors as a f…
Second harmonic generation in germanium quantum wells for nonlinear silicon photonics
Jacopo Frigerio, Chiara Ciano, Joel Kuttruff +12
Second-harmonic generation (SHG) is a direct measure of the strength of second-order nonlinear optical effects, which also include frequency mixing and parametric oscillations. Nat…
Electron-hole superfluidity in strained Si/Ge type II heterojunctions
Sara Conti, Samira Saberi Pouya, Andrea Perali +5
Excitons are promising candidates for generating superfluidity and Bose-Einstein Condensation (BEC) in solid state devices, but an enabling material platform with in-built bandstru…
Intersubband transition engineering in the conduction band of asymmetric coupled Ge/SiGe quantum wells
Luca Persichetti, Michele Montanari, Chiara Ciano +9
: n-type Ge/SiGe asymmetric-coupled quantum wells represent the building block of a variety of nanoscale quantum devices, including recently proposed designs for a silicon-based TH…
Atomic-scale insights into semiconductor heterostructures: from experimental three-dimensional analysis of the interface to a generalized theory of interface roughness scattering
T. Grange, S. Mukherjee, G. Capellini +8
We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable for any semiconductor heterostructure. By exploi…
Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions
T. Grange, D. Stark, G. Scalari +9
n-type Ge/SiGe terahertz quantum cascade laser are investigated using non-equilibrium Green's functions calculations. We compare the temperature dependence of the terahertz gain pr…