146 citations · 569 across the 10 of their papers we have counts for
12 papers
Lattice deformation at the sub-micron scale: X-ray nanobeam measurements of elastic strain in electron shuttling devices
C. Corley-Wiciak, M. H. Zoellner, I. Zaitsev +11
The lattice strain induced by metallic electrodes can impair the functionality of advanced quantum devices operating with electron or hole spins. Here we investigate the deformatio…
Quantum spin Hall phase in GeSn heterostructures on silicon
B. M. Ferrari, F. Marcantonio, F. Murphy-Armando +2
Quantum phases of solid-state electron systems look poised to sustain exotic phenomena and a very rich spin physics. We propose a practical silicon-based architecture that spontane…
A high-mobility hole bilayer in a germanium double quantum well
A. Tosato, B. M. Ferrari, A. Sammak +4
We design, fabricate, and study a hole bilayer in a strained germanium double quantum well. Magnetotransport characterisation of double quantum well field-effect transistors as a f…
Second harmonic generation in germanium quantum wells for nonlinear silicon photonics
Jacopo Frigerio, Chiara Ciano, Joel Kuttruff +12
Second-harmonic generation (SHG) is a direct measure of the strength of second-order nonlinear optical effects, which also include frequency mixing and parametric oscillations. Nat…
THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures
David Stark, Muhammad Mirza, Luca Persichetti +15
We report electroluminescence originating from L-valley transitions in n-type Ge/SiGe quantum cascade structures centered at 3.4 and 4.9 THz with a line broadenin…
Electron-hole superfluidity in strained Si/Ge type II heterojunctions
Sara Conti, Samira Saberi Pouya, Andrea Perali +5
Excitons are promising candidates for generating superfluidity and Bose-Einstein Condensation (BEC) in solid state devices, but an enabling material platform with in-built bandstru…
Intersubband transition engineering in the conduction band of asymmetric coupled Ge/SiGe quantum wells
Luca Persichetti, Michele Montanari, Chiara Ciano +9
: n-type Ge/SiGe asymmetric-coupled quantum wells represent the building block of a variety of nanoscale quantum devices, including recently proposed designs for a silicon-based TH…
Atomic-scale insights into semiconductor heterostructures: from experimental three-dimensional analysis of the interface to a generalized theory of interface roughness scattering
T. Grange, S. Mukherjee, G. Capellini +8
We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable for any semiconductor heterostructure. By exploi…
Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions
T. Grange, D. Stark, G. Scalari +9
n-type Ge/SiGe terahertz quantum cascade laser are investigated using non-equilibrium Green's functions calculations. We compare the temperature dependence of the terahertz gain pr…
Low disordered, stable, and shallow germanium quantum wells: a playground for spin and hybrid quantum technology
A. Sammak, D. Sabbagh, N. W. Hendrickx +10
Buried-channel semiconductor heterostructures are an archetype material platform to fabricate gated semiconductor quantum devices. Sharp confinement potential is obtained by positi…
Gate-controlled quantum dots and superconductivity in planar germanium
N. W. Hendrickx, D. P. Franke, A. Sammak +9
Superconductors and semiconductors are crucial platforms in the field of quantum computing. They can be combined to hybrids, bringing together physical properties that enable the d…
Tunability and Losses of Mid-infrared Plasmonics in Heavily Doped Germanium Thin Films
Jacopo Frigerio, Andrea Ballabio, Giovanni Isella +16
Heavily-doped semiconductor films are very promising for application in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tu…