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Weak localization in monolayer and bilayer graphene
K. Kechedzhi, E. McCann, Vladimir I. Fal'ko +3
We describe the weak localization correction to conductivity in ultra-thin graphene films, taking into account disorder scattering and the influence of trigonal warping of the Ferm…
Tunable Graphene System with Two Decoupled Monolayers
H. Schmidt, T. Luedtke, P. Barthold +3
The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FET) gives access to new ty…
Gate-induced interlayer asymmetry in ABA-stacked trilayer graphene
Mikito Koshino, Edward McCann
We calculate the electronic band structure of ABA-stacked trilayer graphene in the presence of external gates, using a self-consistent Hartree approximation to take account of scre…
Influence of trigonal warping on interference effects in bilayer graphene
K. Kechedzhi, Vladimir I. Fal'ko, E. McCann +1
Bilayer graphene (two coupled graphitic monolayers arranged according to Bernal stacking) is a two-dimensional gapless semiconductor with a peculiar electronic spectrum different f…
Measurement of the energy dependence of phase relaxation by single electron tunneling
P. König, J. Könemann, T. Schmidt +3
Single electron tunneling through a single impurity level is used to probe the fluctuations of the local density of states in the emitter. The energy dependence of quasi-particle r…