59 citations · 142 across the 10 of their papers we have counts for
12 papers
Plastic Relaxation without Dislocations in -GaO Heteroepitaxy: A Structural Peculiarity of GaO Polymorphs
I. Bertoni, A. Marzegalli, A. Ugolotti +3
-GaO grows as three-dimensional islands on mismatched c-plane sapphire, often on a thin -GaO wetting layer, and eventually forms a continuous film by island c…
Growth and characterization of planar hexagonal Ge on CdS
Andrea Besana, Veronica Regazzoni, Marco Faverzani +13
Hexagonal group-IV semiconductors have attracted increasing interest owing to their unconventional electronic and optical properties compared to the cubic diamond phase. However, t…
Resolving the Metastable Si-XIII Structure through Convergent Theory and Experiment
Fabrizio Rovaris, Corrado Bongiorno, Anna Marzegalli +10
Silicon is the undisputed cornerstone of modern technology, with applications ranging from micro- and opto-electronics to quantum technologies. Recently, the exploration of its all…
Electronic States, Spin-Orbit Coupling and Magnetism in Germanium 60° Dislocations
Veronica Regazzoni, Fabrizio Rovaris, Anna Marzegalli +2
Defects in semiconductors have recently attracted renewed interest owing to their potential in novel quantum applications. Here we investigate the electronic and magnetic propertie…
Interaction of dopants with the I-type basal stacking fault in hexagonal-diamond Si
Marc Túnica, Perpetua Wanjiru Muchiri, Alberto Zobelli +3
Recently synthesized hexagonal-diamond silicon, germanium, and silicon-germanium nanowires exhibit remarkable optical and electronic properties when compared to cubic-diamond polyt…
Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation
Mouad Bikerouin, Anna Marzegalli, Davide Spirito +10
We present a comprehensive study on the formation of micrometer-sized, textured hexagonal diamond silicon (hd-Si) crystals via nanoindentation followed by annealing. Utilizing adva…
Unraveling the Atomic-Scale Pathways Driving Pressure-Induced Phase Transitions in Silicon
Fabrizio Rovaris, Anna Marzegalli, Francesco Montalenti +1
Silicon exhibits several metastable allotropes which recently attracted attention in the quest for materials with superior (e.g. optical) properties, compatible with Si technology.…
Polytypic Quantum Wells in Si and Ge: Impact of 2D Hexagonal Inclusions on Electronic Band Structure
Anna Marzegalli, Francesco Montalenti, Emilio Scalise
Crystal defects, traditionally viewed as detrimental, are now being explored for quantum technology applications. This study focuses on stacking faults in silicon and germanium, fo…
In-plane selective area InSb-Al nanowire quantum networks
Roy L. M. Op het Veld, Di Xu, Vanessa Schaller +19
Strong spin-orbit semiconductor nanowires coupled to a superconductor are predicted to host Majorana zero modes. Exchange (braiding) operations of Majorana modes form the logical g…
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires
E. Scalise, A. Sarikov, L. Barbisan +4
The metastable hexagonal-diamond phase of Si and Ge (and of SiGe alloys) displays superior optical properties with respect to the cubic-diamond one. The latter is the most stable a…
Origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach
Emilio Scalise, Luca Barbisan, Andrey Sarikov +3
3C-SiC epitaxially grown on Si displays a large wealth of extended defects. In particular, single, double and triple stacking faults (SFs) are observed in several experiments to co…
Temperature-dependent stability of polytypes and stacking faults in SiC: reconciling theory and experiments
Emilio Scalise, Anna Marzegalli, Francesco Montalenti +1
The relative stability of SiC polytypes, changing with temperature, has been considered a paradox for about thirty years, due to discrepancies between theory and experiments. Based…