9 citations · 23 across the 4 of their papers we have counts for
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physics.app-ph2020★ 9 cited
External control of GaN band bending using phosphonate self-assembled monolayers
T. Auzelle, F. Ullrich, S. Hietzschold +7
We report on the optoelectronic properties of GaN and surfaces after their functionalization with phosphonic acid derivatives. To analyze the possible correl…
cond-mat.mtrl-sci2020
Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires
G. Calabrese, D. van Treeck, V. M. Kaganer +6
We investigate the strain state of ensembles of thin and nearly coalescence-free self-assembled GaN nanowires prepared by plasma-assisted molecular beam epitaxy on Ti/AlO$_{3…