56 citations · 215 across the 6 of their papers we have counts for
6 papers
Nonlinear THz Control of the Lead Halide Perovskite Lattice
Maximilian Frenzel, Marie Cherasse, Joanna M. Urban +9
Lead halide perovskites (LHPs) have emerged as an excellent class of semiconductors for next-generation solar cells and optoelectronic devices. Tailoring physical properties by fin…
The impact of hexagonal boron nitride encapsulation on the structural and vibrational properties of few layer black phosphorus
Magdalena Birowska, Joanna Urban, Michał Baranowski +3
The encapsulation of two-dimensional layered materials such as black phosphorus is of paramount importance for their stability in air. However, the encapsulation poses several ques…
Phase Transition Induced Carrier Mass Enhancement in 2D Ruddlesden-Popper Perovskites
Michal Baranowski, Szymon J. Zelewski, Mikael Kepenekian +10
There is a variety of possible ways to tune the optical properties of 2D perovskites, though the mutual dependence between different tuning parameters hinders our fundamental under…
Giant Fine Structure Splitting of the Bright Exciton in a Bulk MAPbBr Single Crystal
Michal Baranowski, Krzysztof Galkowski, Alessandro Surrente +13
Exciton fine structure splitting in semiconductors reflects the underlying symmetry of the crystal and quantum confinement. Since the latter factor strongly enhances the exchange i…
Symmetry breakdown in franckeite: spontaneous strain, rippling and interlayer moiré
Riccardo Frisenda, Gabriel Sanchez-Santolino, Nikos Papadopoulos +9
Franckeite is a naturally occurring layered mineral with a structure composed of alternating stacks of SnS2-like and PbS-like layers. Although this superlattice is composed of a se…
In-situ Raman Spectroscopy of the Graphene / Water Interface of a Solution-Gated Field Effect Transistor: Electron-Phonon Coupling and Spectroelectrochemistry
J. Binder, J. M. Urban, R. Stepniewski +2
We present a novel measurement approach which combines the electrical characterization of solution-gated field effect transistors based on epitaxial bilayer graphene on 4H-SiC (000…