56 citations · 145 across the 5 of their papers we have counts for
5 papers
Effect of lattice distortions on the electron and thermal transport properties of transparent oxide semiconductor Ba1-xSrxSnO3 solid solution films
Hai Jun Cho, Koichi Sato, Mian Wei +2
La-doped ASnO3 (A = Ba, Sr) have great potential as advanced transparent oxide semiconductors due to their large optical bandgap and relatively high electron mobility. The bandgap…
High electrical conducting deep-ultraviolet-transparent oxide semiconductor La-doped SrSnO3 exceeding ~3000 S cm-1
Mian Wei, Anup V. Sanchela, Bin Feng +3
La-doped SrSnO3 (LSSO) is known as one of deep-ultraviolet (DUV)-transparent conducting oxides with an energy bandgap of ~4.6 eV. Since LSSO can be grown heteroepitaxially on more…
Oxygen vacancy driven mobility enhancement in epitaxial La-doped BaSnO3 from vacuum annealing
Hai Jun Cho, Takaki Onozato, Mian Wei +2
Wide bandgap (~3.1 eV) La-doped BaSnO3 (LBSO) has attracted increasing attention as one of the transparent oxide semiconductors since its bulk single crystal shows a high carrier m…
Buffer layer-less fabrication of high-mobility transparent oxide semiconductor, La-doped BaSnO3
Anup V. Sanchela, Mian Wei, Joonhyuk Lee +6
Transparent oxide semiconductors (TOSs) showing both high visible transparency and high electron mobility have attracted great attention towards the realization of advanced optoele…
Large thickness dependence of the carrier mobility in a transparent oxide semiconductor, La-doped BaSnO3
Anup V. Sanchela, Mian Wei, Haruki Zensyo +6
We report herein that the carrier mobility of the 2%-La-doped BaSnO3 (LBSO) films on (001) SrTiO3 and (001) MgO substrates strongly depends on the thickness whereas it is unrelated…