182 citations · 306 across the 5 of their papers we have counts for
5 papers
Polar InGaN/GaN quantum wells: Revisiting the impact of carrier localization on the green gap problem
Daniel S. P. Tanner, Philip Dawson, Menno J. Kappers +2
We present a detailed theoretical analysis of the electronic and optical properties of c-plane InGaN/GaN quantum well structures with In contents ranging from 5% to 25%. Special at…
A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates
D. Kundys, D. Sutherland, M. Davies +8
In this paper we report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells (QWs) grown on nonpolar a-plane and m-plane fr…
Structural, electronic, and optical properties of -plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory
S. Schulz, D. P. Tanner, E. P. O'Reilly +13
In this paper we present a detailed analysis of the structural, electronic, and optical properties of an -plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor…
Carrier localization mechanisms in InGaN/GaN quantum wells
D. Watson-Parris, M. J. Godfrey, P. Dawson +4
Localization lengths of the electrons and holes in InGaN/GaN quantum wells have been calculated using numerical solutions of the effective mass Schrödinger equation. We have treate…
Carrier relaxation with LO phonon decay in semiconductor quantum dots
S. A. Levetas, M. J. Godfrey, P. Dawson
Analysis of an exactly soluble model of phonons coupled to a carrier in a quantum dot provides a clear illustration of a phonon bottleneck to relaxation. The introduction of three-…