2 papers
cond-mat.mtrl-sci2024
Contact Resistance Optimization in MoS Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications
Yuan Fa, Agata Piacentini, Bart Macco +5
Two-dimensional material (2DM)-based field-effect transistors (FETs), such as molybdenum disulfide (MoS)-FETs, have gained significant attention for their potential for ultra…
physics.app-ph2024
Dry Transfer Based on PMMA and Thermal Release Tape for Heterogeneous Integration of 2D-TMDC Layers
Amir Ghiami, Hleb Fiadziushkin, Tianyishan Sun +9
A reliable and scalable transfer of 2D-TMDCs (two-dimensional transition metal dichalcogenides) from the growth substrate to a target substrate with high reproducibility and yield…