activity
20202025
most citedA critical analysis of models and experimental evidence of negative capacitance stabilization in a ferroelectric by capacitance matching to an adjacent dielectric layer

1 citations · 1 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2025

Sub-unit cell engineering of CrVO superlattice thin films

Claudio Bellani, Simon Mellaerts, Wei-Fan Hsu +13

Ordered corundum oxides introduce new prospects in the field of functional oxides thin films, complementing the more widely studied class of ABO perovskites. In this work, we t…

cond-mat.mes-hall2024

Fully coupled electron-phonon transport in two-dimensional-material-based devices using efficient FFT-based self-energy calculations

Rutger Duflou, Gautam Gaddemane, Michel Houssa +1

Self-heating effects can significantly degrade the performance in nanoscale devices. We investigate self-heating effects in such devices based on two-dimensional materials using ab…

cond-mat.mtrl-sci2023

Confinement-Induced Isosymmetric Metal-Insulator Transition in Ultrathin Epitaxial V2O3 Films

Simon Mellaerts, Claudio Bellani, Wei-Fan Hsu +9

Dimensional confinement has shown to be an effective strategy to tune competing degrees of freedom in complex oxides. Here, we achieved atomic layered growth of trigonal vanadium s…

cond-mat.mes-hall2020

Comment on "Unveiling the double-well energy landscape in a ferroelectric layer"

J. A. Kittl, M. Houssa, V. V. Afanasiev +1

Analysis of data presented in the paper -- Unveiling the double-well energy landscape in a ferroelectric layer, by M. Hoffmann, et al., Nature 565, 464 (2019) -- suggesting the cla…

cond-mat.mes-hall2020★ 1 cited

A critical analysis of models and experimental evidence of negative capacitance stabilization in a ferroelectric by capacitance matching to an adjacent dielectric layer

J. A. Kittl, J. -P. Locquet, M. Houssa +1

We present a thorough analysis of the foundations of models of stabilization of negative capacitance (NC) in a ferroelectric (FE) layer by capacitance matching to a dielectric laye…