2 papers
cs.ET2022
Smart Material Implication Using Spin-Transfer Torque Magnetic Tunnel Junctions for Logic-in-Memory Computing
Raffaele De Rose, Tommaso Zanotti, Francesco Maria Puglisi +3
Smart material implication (SIMPLY) logic has been recently proposed for the design of energy-efficient Logic-in-Memory (LIM) architectures based on non-volatile resistive memory d…
physics.app-ph2020
A Memory Window Expression to Predict the Scaling Trends and Endurance of FeFETs
Nicoló Zagni, Paolo Pavan, Muhammad Ashraful Alam
The commercialization of non-volatile memories based on ferroelectric transistors (FeFETs) has remained elusive due to scaling, retention, and endurance issues. Thus, it is importa…