activity
20162020
most citedDiscovery of a new type of topological Weyl fermion semimetal state in MoWTe

190 citations · 278 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2020★ 12 cited

Large Magnetoresistance in Topological Insulator Candidate TaSe3

Yong Zhang, Tongshuai Zhu, Haijun Bu +11

Large unsaturated magnetoresistance (XMR) with magnitude about 1000% is observed in topological insulator candidate TaSe3 from our high field (up to 38 T) measurements. Two oscilla…

cond-mat.mes-hall2019★ 17 cited

Magneto-transport and Shubnikov-de Haas oscillations in the layered ternary telluride Ta3SiTe6 topological semimetal

Muhammad Naveed, Fucong Fei, Haijun Bu +10

Topological semimetals characterize a novel class of quantum materials hosting Dirac/Weyl fermions. The important features of topological fermions can be exhibited by quantum oscil…

cond-mat.mes-hall2018

Oscillating planar Hall response from the surface electrons in bulk crystal Sn doped Bi1.1Sb0.9Te2S

Bin Wu, Xing-Chen Pan, Wenkai Wu +7

We report the low-temperature magneto-transport in the bulk-insulating single crystal of topological insulator Sn doped Bi1.1Sb0.9Te2S. The Shubnikov-de Haas oscillations appear wi…

cond-mat.mtrl-sci2017★ 57 cited

Approaching the Type-II Dirac Point and Concomitant Superconductivity in Pt-doping Stabilized Metastable 1T-phase IrTe2

Fucong Fei, Xiangyan Bo, Pengdong Wang +12

Topological semimetal is a topic of general interest in material science. Recently, a new kind of topological semimetal called type-II Dirac semimetal with tilted Dirac cones is di…

cond-mat.mtrl-sci2016★ 190 cited

Discovery of a new type of topological Weyl fermion semimetal state in MoWTe

Ilya Belopolski, Daniel S. Sanchez, Yukiaki Ishida +23

The recent discovery of a Weyl semimetal in TaAs offers the first Weyl fermion observed in nature and dramatically broadens the classification of topological phases. However, in Ta…

cond-mat.mes-hall2016★ 2 cited

Repairing atomic vacancies in single-layer MoSe2 field-effect transistor and its defect dynamics

Yuze Meng, Chongyi Ling, Run Xin +10

Here we repair the single-layer MoSe2 field-effect transistors by the EDTA processing, after which the devices' room-temperature carrier mobility increases from 0.1 to over 70cm2/V…