3 papers
cond-mat.mtrl-sci2020
Dislocation pipe diffusion and solute segregation during the growth of metastable GeSn
Jérôme Nicolas, Simone Assali, Samik Mukherjee +2
Controlling the growth kinetics from the vapor phase has been a powerful paradigm enabling a variety of metastable epitaxial semiconductors such as Sn-containing group IV semicondu…
physics.app-ph2019
Vacancy complexes in nonequilibrium germanium-tin semiconductors
Simone Assali, Mohamed Elsayed, Jérôme Nicolas +5
Understanding the nature and behavior of vacancy-like defects in epitaxial GeSn metastable alloys is crucial to elucidate the structural and optoelectronic properties of these emer…
cond-mat.mtrl-sci2019
Decoupling the effects of composition and strain on the vibrational modes of GeSn
Étienne Bouthillier, Simone Assali, Jérôme Nicolas +1
We report on the behavior of Ge-Ge, Ge-Sn, Sn-Sn like and disorder-activated vibrational modes in GeSn semiconductors investigated using Raman scattering spectroscopy. By using an…