46 citations · 127 across the 6 of their papers we have counts for
6 papers
500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon
Simone Assali, Sebastian Koelling, Zeinab Abboud +3
Ge/SiGe multi-quantum well heterostructures are highly sought-after for silicon-integrated optoelectronic devices operating in the broad range of the electromagnetic spectrum cover…
A Light-Hole Quantum Well on Silicon
Simone Assali, Anis Attiaoui, Patrick Del Vecchio +3
The quiet quantum environment of holes in solid-state devices has been at the core of increasingly reliable architectures for quantum processors and memories.1-6 However, due to th…
Micrometer-thick, atomically random Si0.06Ge0.90Sn0.04 for silicon-integrated infrared optoelectronics
Simone Assali, Anis Attiaoui, Sebastian Koelling +6
A true monolithic infrared photonics platform is within reach if strain and bandgap energy can be independently engineered in SiGeSn semiconductors. Herein, we investigate the stru…
Dislocation pipe diffusion and solute segregation during the growth of metastable GeSn
Jérôme Nicolas, Simone Assali, Samik Mukherjee +2
Controlling the growth kinetics from the vapor phase has been a powerful paradigm enabling a variety of metastable epitaxial semiconductors such as Sn-containing group IV semicondu…
Vacancy complexes in nonequilibrium germanium-tin semiconductors
Simone Assali, Mohamed Elsayed, Jérôme Nicolas +5
Understanding the nature and behavior of vacancy-like defects in epitaxial GeSn metastable alloys is crucial to elucidate the structural and optoelectronic properties of these emer…
Decoupling the effects of composition and strain on the vibrational modes of GeSn
Étienne Bouthillier, Simone Assali, Jérôme Nicolas +1
We report on the behavior of Ge-Ge, Ge-Sn, Sn-Sn like and disorder-activated vibrational modes in GeSn semiconductors investigated using Raman scattering spectroscopy. By using an…