29 citations · 30 across the 2 of their papers we have counts for
2 papers
physics.app-ph2020★ 1 cited
Oxygen vacancy engineering of TaOx-based resistive memories by Zr doping for improved variability and synaptic behavior
Joao H. Quintino Palhares, Yann Beilliard, Fabien Alibart +5
Resistive switching devices are promising emerging non-volatile memories. However, one of the biggest challenges for resistive switching (RS) memory applications is the device-to-d…
physics.app-ph2020★ 29 cited
Probing the Electronic Properties of Monolayer MoS via Interaction with Molecular Hydrogen
Natália P. Rezende, Alisson R. Cadore, Andreij C. Gadelha +8
This work presents a detailed experimental investigation of the interaction between molecular hydrogen (H) and monolayer MoS field effect transistors (MoS FET), aiming…