Prolonging Carrier Lifetime in P-type 4H-SiC Epilayer by Thermal Oxidation and Hydrogen Annealing

Ruijun Zhang, Mingkun Zhang, Guoliang Zhang +12

A minority carrier lifetime of 25.46 $\hat{I}¼$s in a P-type 4H-SiC epilayer has been attained through sequential thermal oxidation and hydrogen annealing. Thermal oxidation can enhance…