1 citations · 1 across the 5 of their papers we have counts for
5 papers
High Mobility SiGe/Ge 2DHG Heterostructure Quantum Wells for Semiconductor Hole Spin Qubits
Zhenzhen Kong, Zonghu Li, Yuchen Zhou +11
Strong spin-orbit coupling and relatively weak hyperfine interactions make germanium hole spin qubits a promising candidate for semiconductor quantum processors. The two-dimensiona…
Gate-defined quantum point contacts in a germanium quantum well
Han Gao, Zhen-Zhen Kong, Po Zhang +6
We report an experimental study of quantum point contacts defined in a high-quality strained germanium quantum well with layered electric gates. At zero magnetic field, we observe…
Effective electrical manipulation of topological antiferromagnet by orbital Hall effect
Zhenyi Zheng, Tao Zeng, Tieyang Zhao +14
Electrical control of the non-trivial topology in Weyl antiferromagnet is of great interests to develop next-generation spintronic devices. Recent works suggest that spin Hall effe…
Undoped Strained Ge Quantum Well with Ultrahigh Mobility Grown by Reduce Pressure Chemical Vapor Deposition
Zhenzhen Kong, Zonghu Li, Gang Cao +15
We fabricate an undoped Ge quantum well under 30 nm Ge0.8Si0.2 shallow barrier with reverse grading technology. The under barrier is deposited by Ge0.8Si0.2 followed by Ge0.9Si0.1…
A Study of Selectively Digital Etching Silicon-Germanium with Nitric and Hydrofluoric Acids
Chen Li, Huilong Zhu, Yongkui Zhang +13
A digital etching method was proposed to achieve excellent control of etching depth. The digital etching characteristics of p+ Si and Si0.7Ge0.3 using the combinations of HNO3 oxid…