20 citations · 56 across the 6 of their papers we have counts for
6 papers
Towards hole-spin qubits in Si pMOSFETs within a planar CMOS foundry technology
L. Bellentani, M. Bina, S. Bonen +6
Hole spins in semiconductor quantum dots represent a viable route for the implementation of electrically controlled qubits. In particular, the qubit implementation based on Si pMOS…
Interacting holes in Si and Ge double quantum dots: from a multiband approach to an effective-spin picture
Andrea Secchi, Laura Bellentani, Andrea Bertoni +1
The states of two electrons in tunnel-coupled semiconductor quantum dots can be effectively described in terms of a two-spin Hamiltonian with an isotropic Heisenberg interaction. A…
Inter- and intra-band Coulomb interactions between holes in silicon nanostructures
Andrea Secchi, Laura Bellentani, Andrea Bertoni +1
We present a full derivation of the interaction Hamiltonian for holes in silicon within the six-band envelope-function scheme, which appropriately describes the valence band close…
Two-electron selective coupling in an edge-state based conditional phase shifter
Laura Bellentani, Gaia Forghieri, Paolo Bordone +1
We investigate the effect of long-range Coulomb interaction on the two-electron scattering in the integer quantum Hall regime at bulk filling factor 2. A parallel version of the Sp…
Coulomb and exchange interaction effects on the exact two-electron dynamics in the Hong-Ou-Mandel interferometer based on Hall edge states
Laura Bellentani, Paolo Bordone, Xavier Oriols +1
The electronic Hong-Ou-Mandel interferometer in the integer quantum Hall regime is an ideal system to probe the building up of quantum correlations between charge carriers and it h…
Dynamics and Hall-edge-state mixing of localized electrons in a two-channel Mach-Zehnder interferometer
Laura Bellentani, Andrea Beggi, Paolo Bordone +1
We present a numerical study of a multichannel electronic Mach-Zehnder interferometer, based on magnetically-driven non-interacting edge states. The electron path is defined by a f…