80 citations · 102 across the 5 of their papers we have counts for
5 papers
Selective Area Growth Rates of III-V Nanowires
Martin Espiñeira Cachaza, Anna Wulff Christensen, Daria Beznasyuk +6
Selective area growth (SAG) of semiconductors is a scalable method for fabricating gate-controlled quantum platforms. This letter reports on the adatom diffusion, incorporation, an…
Doubling the mobility of InAs/InGaAs selective area grown nanowires
Daria V. Beznasyuk, Sara Martí-Sánchez, Jung-Hyun Kang +12
Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics and quantum devices based on III-V semiconductor materials. The potenti…
Transparent Gatable Superconducting Shadow Junctions
Sabbir A. Khan, Charalampos Lampadaris, Ajuan Cui +14
Gate tunable junctions are key elements in quantum devices based on hybrid semiconductor-superconductor materials. They serve multiple purposes ranging from tunnel spectroscopy pro…
Semiconductor - Ferromagnetic Insulator - Superconductor Nanowires: Stray Field and Exchange Field
Yu Liu, Saulius Vaitiekenas, Sara Marti-Sanchez +12
Nanowires can serve as flexible substrates for hybrid epitaxial growth on selected facets, allowing for design of heterostructures with complex material combinations and geometries…
Raman spectroscopy and electrical properties of InAs nanowires with local oxidation enabled by substrate micro-trenches and laser irradiation
R. Tanta, M. H. Madsen, Z. Liao +4
The thermal gradient along indium-arsenide nanowires was engineered by a combination of fabricated micro- trenches in the supporting substrate and focused laser irradiation. This a…