O. Bierwagen

activity

20182024

most citedSnO/

β

-Ga2O3 vertical

p n

heterojunction diodes

96 citations · 613 across the 24 of their papers we have counts for

collaborators

Showing 2021Show all

4 papers · 1 filter

cond-mat.mtrl-sci2021★ 8 cited

The electrical conductivity of cubic (In $_{1 - x}$ Ga $_{x}$ ) $_{2}$ O $_{3}$ films ( $x \leq 0.18$ ): Native point defects, Sn-doping, and the surface electron accumulation layer

Alexandra Papadogianni, Takahiro Nagata, Oliver Bierwagen

The alloying of the group-III transparent semiconducting sesquioxides In $_{2}$ O $_{3}$ and Ga $_{2}$ O $_{3}$ can lead to a modulation of the properties of the parent compounds, e.g., the shal…

cond-mat.mtrl-sci2021★ 16 cited

Drastically enhanced cation incorporation in the epitaxy of oxides due to formation and evaporation of suboxides from elemental sources

Georg Hoffmann, Zongzhe Cheng, Oliver Brandt +1

In the molecular beam epitaxy of oxide films, the cation (Sn, Ga) or dopant (Sn) incorporation does not follow the vapor pressure of the elemental metal sources, but is enhanced by…

cond-mat.mtrl-sci2021★ 8 cited

Molecular beam epitaxy of single-crystalline bixbyite (In $_{1 - x}$ Ga $_{x}$ ) $_{2}$ O $_{3}$ films ( $x \leq 0.18$ ): Structural properties and consequences of compositional inhomogeneity

Alexandra Papadogianni, Charlotte Wouters, Robert Schewski +9

In this work, we show the heteroepitaxial growth of single-crystalline bixbyite (In $_{1 - x}$ Ga $_{x}$ ) $_{2}$ O $_{3}$ films on (111)-oriented yttria-stabilized zirconia substrates using plas…

cond-mat.mtrl-sci2021★ 5 cited

Bandgap widening and behavior of Raman-active phonon modes of cubic single-crystalline (In,Ga) $_{2}$ O $_{3}$ alloy films

Johannes Feldl, Martin Feneberg, Alexandra Papadogianni +5

The influence of Ga incorporation into cubic In $_{2}$ O $_{3}$ on the electronic and vibrational properties is discussed for (In $_{1 - x}$ ,Ga $_{x}$ ) $_{2}$ O $_{3}$ alloy films grown by molecular b…

The electrical conductivity of cubic (In1−x​Gax​)2​O3​ films (x≤0.18): Native point defects, Sn-doping, and the surface electron accumulation layer

Drastically enhanced cation incorporation in the epitaxy of oxides due to formation and evaporation of suboxides from elemental sources

Molecular beam epitaxy of single-crystalline bixbyite (In1−x​Gax​)2​O3​ films (x≤0.18): Structural properties and consequences of compositional inhomogeneity

Bandgap widening and behavior of Raman-active phonon modes of cubic single-crystalline (In,Ga)2​O3​ alloy films

The electrical conductivity of cubic (In $_{1 - x}$ Ga $_{x}$ ) $_{2}$ O $_{3}$ films ( $x \leq 0.18$ ): Native point defects, Sn-doping, and the surface electron accumulation layer

Molecular beam epitaxy of single-crystalline bixbyite (In $_{1 - x}$ Ga $_{x}$ ) $_{2}$ O $_{3}$ films ( $x \leq 0.18$ ): Structural properties and consequences of compositional inhomogeneity

Bandgap widening and behavior of Raman-active phonon modes of cubic single-crystalline (In,Ga) $_{2}$ O $_{3}$ alloy films