activity
20182024
most citedSnO/-Ga2O3 vertical heterojunction diodes

96 citations · 613 across the 24 of their papers we have counts for

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6 papers · 1 filter

physics.app-ph2023★ 10 cited

Phase-selective growth of - vs -GaO and (InGa)O by In-mediated metal exchange catalysis in plasma-assisted molecular beam epitaxy

A. Ardenghi, O. Bierwagen, J. Lähnemann +4

Its piezo- and potentially ferroelectric properties make the metastable kappa polymorph of GaO an interesting material for multiple applications, while In-incorporation int…

physics.app-ph2020★ 96 cited

SnO/-Ga2O3 vertical heterojunction diodes

Melanie Budde, Daniel Splith, Piero Mazzolini +6

Vertical heterojunction diodes were prepared by plasma-assisted molecular beam epitaxy of unintentionally-doped -type SnO layers with hole concentrations ranging from $p=10…

physics.app-ph2020★ 14 cited

The two-dimensional electron gas of the In2O3 surface: Enhanced thermopower, electrical transport properties, and its reduction by adsorbates or compensating acceptor doping

Alexandra Papadogianni, Julius Rombach, Theresa Berthold +4

In2O3 is an n-type transparent semiconducting oxide possessing a surface electron accumulation layer (SEAL) like several other relevant semiconductors, such as InAs, InN, SnO2, and…

physics.app-ph2020★ 33 cited

Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy

Melanie Budde, Carsten Tschammer, Philipp Franz +7

NiO layers were grown on MgO(100), MgO(110), and MgO(111) substrates by plasma-assisted molecular beam epitaxy under Ni-flux limited growth conditions. Single crystalline growth wi…

physics.app-ph2019★ 25 cited

Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)

Melanie Budde, Thilo Remmele, Carsten Tschammer +8

The growth of NiO on GaN(00.1) substrates by plasma-assisted molecular beam epitaxy under oxygen rich conditions was investigated at growth temperatures between 100 C and…

physics.app-ph2018★ 19 cited

The electrical conductivity tensor of -Ga2O3 analyzed by van der Pauw measurements: Inherent anisotropy, off-diagonal element, and the impact of grain boundaries

Christian Golz, Vanesa Hortelano, Fariba Hatami +3

The semiconducting oxide -Gallium Oxide (-GaO) possesses a monoclinic unit cell whose low symmetry generally leads to anisotropic physical properties. For example…