1 citations · 1 across the 1 of their papers we have counts for
2 papers
cond-mat.mes-hall2021★ 1 cited
A Generalized Tunneling Current Formula for Metal/Insulator Heterojunctions under Large Bias and Finite Temperature
Zenghua Cai, Menglin Huang, Peng Zhou +1
The Fowler-Nordheim tunneling current formula has been widely used in the design of devices based on metal/insulator (metal/semiconductor) heterojunctions with triangle potential b…
cond-mat.mtrl-sci2020
First-Principles Exploration of Defect-Pairs in GaN
He Li, Menglin Huang, Shiyou Chen
Using first-principles calculations, we explored all the 21 defect-pairs in GaN and considered 6 configurations with different defect-defect distances for each defect-pair. 15 defe…