86 citations · 155 across the 6 of their papers we have counts for
6 papers
Extraordinary cation-replace-cation antisite defect predominate in Bi2SeO5
Chen-Min Dai, Feifan Bian, Yafeng Zhang +4
As a newly identified single-crystalline van der Waals dielectric with a high dielectric constant, Bi2SeO5 plays a pivotal role in advancing 2D electronic devices. In this work, we…
Si/SiO MOSFET Reliability Physics: From Four-State Model to All-State Model
Xinjing Guo, Menglin Huang, Shiyou Chen
As implemented in the commercialized device modeling software, the four-state nonradiative multi-phonon model has attracted intensive attention in the past decade for describing th…
Effective Lifetime of Non-Equilibrium Carriers in Semiconductors from Non-Adiabatic Molecular Dynamics Simulations
Shanshan Wang, Menglin Huang, Yu-Ning Wu +6
The lifetime of non-equilibrium electrons and holes in semiconductors is crucial for solar cell and optoelectronic applications. Non-adiabatic molecular dynamics (NAMD) simulations…
DASP: Defect and Dopant ab-initio Simulation Package
Menglin Huang, Zhengneng Zheng, Zhenxing Dai +5
In order to perform automated calculations of defect and dopant properties in semiconductors and insulators, we developed a software package, Defect and Dopant ab-initio Simulation…
A Generalized Tunneling Current Formula for Metal/Insulator Heterojunctions under Large Bias and Finite Temperature
Zenghua Cai, Menglin Huang, Peng Zhou +1
The Fowler-Nordheim tunneling current formula has been widely used in the design of devices based on metal/insulator (metal/semiconductor) heterojunctions with triangle potential b…
First-Principles Exploration of Defect-Pairs in GaN
He Li, Menglin Huang, Shiyou Chen
Using first-principles calculations, we explored all the 21 defect-pairs in GaN and considered 6 configurations with different defect-defect distances for each defect-pair. 15 defe…