2 citations · 3 across the 8 of their papers we have counts for
8 papers
Simple mathematical model of aging
Yu. N. Morokov
A simple mathematical model of the aging process for long-lived organisms is considered. The key point in this model is the assumption that the body does not have internal clocks t…
Elastic Strain Fields In Lateral Double Ge/Si Quantum Dots
Yu. N. Morokov, M. P. Fedoruk
Simulations of the elastic strain fields for double Ge/Si quantum dots located on the same wetting layer are carried out. The cluster approximation is used for the atomistic model…
Calculation of Elastic Strain Fields for Single Ge/Si Quantum Dots
Yu. N. Morokov, M. P. Fedoruk
An atomistic model based on the Keating potential and the conjugate gradient method are used for simulation of the strain fields for single Ge/Si quantum dots. Calculations are per…
Structures with Vertically Stacked Ge/Si Quantum Dots for Logical Operations
Yu. N. Morokov, M. P. Fedoruk, A. V. Dvurechenskii +2
Ge/Si structures with vertically stacked quantum dots are simulated to implement the basic elements of a quantum computer for operation with electron spin states. Elastic-strain fi…
Memory Effect in Silicon Nitride in Silicon Devices
V. A. Gritsenko, Yu. N. Morokov, Yu. N. Novikov +1
The dominant dielectric used currently in silicon devices is silicon oxide. Its application for future devices will be impeded by several fundamental limitations which lead to low…
Nature of traps responsible for failure of MOS devices
V. A. Gritsenko, P. M. Lenahan, Yu. N. Morokov +1
A failure of chips in a huge amount of modern electronic devices is connected as a rule with the undesirable capturing of charge (electrons and holes) by traps in a thin insulating…