activity
20102026
most citedLow-frequency charge noise in Si/SiGe quantum dots

154 citations · 699 across the 15 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

8 papers · 1 filter

cond-mat.mes-hall2021★ 33 cited

Coherent spin-valley oscillations in silicon

Xinxin Cai, Elliot J. Connors, John M. Nichol

Electron spins in silicon quantum dots are excellent qubits because they have long coherence times, high gate fidelities, and are compatible with advanced semiconductor manufacturi…

cond-mat.mes-hall2021★ 37 cited

How valley-orbit states in silicon quantum dots probe quantum well interfaces

J. P. Dodson, H. Ekmel Ercan, J. Corrigan +7

The energies of valley-orbit states in silicon quantum dots are determined by an as yet poorly understood interplay between interface roughness, orbital confinement, and electron i…

cond-mat.mes-hall2021★ 130 cited

Charge-noise spectroscopy of Si/SiGe quantum dots via dynamically-decoupled exchange oscillations

Elliot J. Connors, JJ Nelson, Lisa F. Edge +1

Electron spins in silicon quantum dots are promising qubits due to their long coherence times, scalable fabrication, and potential for all-electrical control. However, charge noise…

cond-mat.mes-hall2021★ 26 cited

Probing the Spatial Variation of the Inter-Valley Tunnel Coupling in a Silicon Triple Quantum Dot

F. Borjans, X. Zhang, X. Mi +5

Electrons confined in silicon quantum dots exhibit orbital, spin, and valley degrees of freedom. The valley degree of freedom originates from the bulk bandstructure of silicon, whi…

cond-mat.mes-hall2020★ 44 cited

Coherent control and spectroscopy of a semiconductor quantum dot Wigner molecule

J. Corrigan, J. P. Dodson, H. Ekmel Ercan +12

Multi-electron semiconductor quantum dots have found wide application in qubits, where they enable readout and enhance polarizability. However, coherent control in such dots has ty…

cond-mat.mes-hall2020★ 9 cited

Direct measurement of electron intervalley relaxation in a Si/SiGe quantum dot

Nicholas E. Penthorn, Joshua S. Schoenfield, Lisa F. Edge +1

The presence of non-degenerate valley states in silicon can drastically affect electron dynamics in silicon-based heterostructures, leading to electron spin relaxation and spin-val…

cond-mat.mes-hall2019★ 154 cited

Low-frequency charge noise in Si/SiGe quantum dots

Elliot J. Connors, JJ Nelson, Haifeng Qiao +2

Electron spins in silicon have long coherence times and are a promising qubit platform. However, electric field noise in semiconductors poses a challenge for most single- and multi…

cond-mat.mes-hall2016★ 94 cited

Circuit Quantum Electrodynamics Architecture for Gate-Defined Quantum Dots in Silicon

X. Mi, J. V. Cady, D. M. Zajac +3

We demonstrate a hybrid device architecture where the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an on-chip superconducting…