357 citations · 447 across the 17 of their papers we have counts for
17 papers
In-plane magnetic field control of anomalous Hall response enabled by magnetic anisotropy engineering
J. C. Rodriguez E., E. De Biasi, J. I. Facio +7
Engineering magnetic anisotropy provides a powerful route to control magnetization orientation and unlock emerging functionalities in opto-spintronic and current-driven devices. Be…
Towards Ultra Scalability of Non-Volatile Magnetic Tunnel Junctions with a 3D Storage Layer
Nuno Caçoilo, Shunsuke Fukami, Olivier Fruchart +1
The perpendicular Spin Transfer Torque Magnetic Random Access Memory is one of the most promising emerging non-volatile memory technologies, based on ultra-thin magnetic tunnel jun…
Simulation of current-driven magnetisation switching in nanopillars with Perpendicular Shape Anisotropy
Natalia Boscolo Meneguolo, Daria Gusakova, Jean-Christophe Toussaint +3
The Perpendicular Shape Anisotropy Spin Transfer Torque Magnetic Random Access Memory (PSA-STT-MRAM) is a recent concept proposed to maintain the thermal stability of standard MRAM…
Dipolar coupled core-shell perpendicular shape anisotropy MTJ with enhanced write speed and reduced cross-talk
N. Caçoilo, L. D. Buda-Prejbeanu, B. Dieny +2
The concept of Perpendicular Shape-Anisotropy Spin-Transfer-Torque Magnetic Random-Access Memory tackles the downsize scalability limit of conventional ultrathin magnetic tunnel ju…
Field-free all-optical switching and electrical read-out of Tb/Co-based magnetic tunnel junctions
D. Salomoni, Y. Peng, L. Farcis +8
Switching of magnetic tunnel junction using femto-second laser enables a possible path for THz frequency memory operation, which means writing speeds 2 orders of magnitude faster t…
In plane reorientation induced single laser pulse magnetization reversal in rare-earth based multilayer
Y. Peng, D. Salomoni, G. Malinowski +10
Single Pulse All Optical Helicity Independent Switching (AO-HIS) represents the ability to reverse the magnetic moment of a nanostructure using a femtosecond single laser pulse. It…
Optical Switching in Tb/Co-Multilayer Based Nanoscale Magnetic Tunnel Junctions
Sucheta Mondal, Debanjan Polley, Akshay Pattabi +10
Magnetic tunnel junctions (MTJs) are elementary units of magnetic memory devices. For high-speed and low-power data storage and processing applications, fast reversal by an ultrash…
Off-axis electron holography for the direct visualization of perpendicular shape anisotropy in nano-scale 3D magnetic random-access-memory devices
Trevor P. Almeida, Alvaro Palomino, Steven Lequeux +5
Perpendicular shape anisotropy (PSA) and double magnetic tunnel junctions (DMTJ) offer practical solutions to downscale spin-transfer-torque Magnetic Random-Access Memory (STT-MRAM…
Direct observation of the perpendicular shape anisotropy and thermal stability of p-STT-MRAM nano-pillars
Trevor P. Almeida, Steven Lequeux, Alvaro Palomino +6
Perpendicular shape anisotropy (PSA) offers a practical solution to downscale spin-transfer torque Magnetic Random-Access Memory (STT-MRAM) beyond the sub-20 nm technology node whi…
Size-dependent enhancement of passive microwave rectification in magnetic tunnel junctions with perpendicular magnetic anisotropy
A. Sidi El Valli, V. Iurchuk, G. Lezier +11
Spintronic rf detectors were demonstrated, recently, for energy harvesting and wireless communication at low input power. Here we report on the optimization of the rectified output…
Observation of magnetic helicoidal dichroism with extreme ultraviolet light vortices
Mauro Fanciulli, Matteo Pancaldi, Emanuele Pedersoli +17
We report on the experimental evidence of magnetic helicoidal dichroism, observed in the interaction of an extreme ultraviolet vortex beam carrying orbital angular momentum with a…
Magnetization reversal driven by spin-transfer-torque in perpendicular shape anisotropy magnetic tunnel junctions
N. Caçoilo, S. Lequeux, B. M. S. Teixeira +6
The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values compara…
Realizing an Isotropically Coercive Magnetic Layer for Memristive Applications by Analogy to Dry Friction
Marco Mansueto, Antoine Chavent, Stephane Auffret +8
We investigate the possibility of realizing a spintronic memristive device based on the dependence of the tunnel conductance on the relative angle between the magnetization of the…
Opportunities and challenges for spintronics in the microelectronic industry
Bernard Dieny, Ioan Lucian Prejbeanu, Kevin Garello +22
Spin-based electronics has evolved into a major field of research that broadly encompasses different classes of materials, magnetic systems, and devices. This review describes rece…
Steady State and Dynamics of Joule Heating in Magnetic Tunnel Junctions Observed via the Temperature Dependence of RKKY Coupling
A. Chavent, C. Ducruet, C. Portemont +5
Understanding quantitatively the heating dynamics in magnetic tunnel junctions (MTJ) submitted to current pulses is very important in the context of spin-transfer-torque magnetic r…
The 2014 Magnetism Roadmap
Robert L. Stamps, Stephan Breitkreutz, Johan Åkerman +11
Magnetism is a very fascinating and dynamic field. Especially in the last 30 years it has experienced many major advances in the full range from novel fundamental phenomena to new…
Modulating spin transfer torque switching dynamics with two orthogonal spin-polarizers by varying the cell aspect ratio
B. Lacoste, M. Marins de Castro, T. Devolder +9
We study in-plane magnetic tunnel junctions with additional perpendicular polarizer for subnanosecond-current-induced switching memories. The spin-transfer-torque switching dynamic…