171 citations · 433 across the 10 of their papers we have counts for
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cond-mat.mes-hall2020★ 16 cited
Magnetization reversal driven by spin-transfer-torque in perpendicular shape anisotropy magnetic tunnel junctions
N. Caçoilo, S. Lequeux, B. M. S. Teixeira +6
The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values compara…
physics.app-ph2020★ 7 cited
Realizing an Isotropically Coercive Magnetic Layer for Memristive Applications by Analogy to Dry Friction
Marco Mansueto, Antoine Chavent, Stephane Auffret +8
We investigate the possibility of realizing a spintronic memristive device based on the dependence of the tunnel conductance on the relative angle between the magnetization of the…