2 papers
physics.app-ph2020
Realizing an Isotropically Coercive Magnetic Layer for Memristive Applications by Analogy to Dry Friction
Marco Mansueto, Antoine Chavent, Stephane Auffret +8
We investigate the possibility of realizing a spintronic memristive device based on the dependence of the tunnel conductance on the relative angle between the magnetization of the…
cond-mat.mtrl-sci2018
Highly thermally stable sub-20nm magnetic random-access memory based on perpendicular shape anisotropy
N. Perrissin, S. Lequeux, N. Strelkov +6
A new approach to increase the downsize scalability of perpendicular STT-MRAM is presented. It consists in significantly increasing the thickness of the storage layer in out-of-pla…