activity
20192021
most citedRelevance of Ge incorporation to control the physical behaviour of point defects in kesterite

18 citations · 41 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2021★ 18 cited

Relevance of Ge incorporation to control the physical behaviour of point defects in kesterite

Thomas Ratz, Ngoc Duy Nguyen, Guy Brammertz +2

To reduce the prominent VOC-deficit that limits kesterite-based solar cells efficiencies, Ge has been proposed over the recent years with encouraging results, as the reduction of t…

physics.app-ph2020★ 16 cited

Opto-electronic properties and solar cell efficiency modelling of CuZnXS (X=Sn,Ge,Si) kesterites

Thomas Ratz, Jean-Yves Raty, Guy Brammertz +2

In this work, first principle calculations of CuZnSnS (CZTS), CuZnGeS (CZGS) and CuZnSiS (CZSS) are performed to highlight the impact of the cationic substi…

cond-mat.mes-hall2020★ 2 cited

A roadmap for the design of four-terminal spin valves and the extraction of spin diffusion length

Emile Fourneau, Alejandro V. Silhanek, Ngoc D. Nguyen

Graphene is a promising substrate for future spintronics devices owing to its remarkable electronic mobility and low spin-orbit coupling. Hanle precession in spin valve devices is…

physics.app-ph2020★ 5 cited

On the origin of the giant spin detection efficiency in tunnel barrier based electrical spin detector

Emile Fourneau, Alejandro V. Silhanek, Ngoc Duy Nguyen

Efficient conversion of a spin signal into an electric voltage in mainstream semiconductors is one of the grand challenges of spintronics. This process is commonly achieved via a f…

cond-mat.mes-hall2019

Trapping of electrons around nanoscale metallic wires embedded in a semiconductor medium

Chi Cuong Huynh, R. Evrard, Ngoc Duy Nguyen

We predict that conduction electrons in a semiconductor film containing a centered square array of metal nanowires normal to its plane are bound in quantum states around the centra…