most citedCMOS-Free Multilayer Perceptron Enabled by Four-Terminal MTJ Device

3 citations · 6 across the 3 of their papers we have counts for

collaborators

6 papers

cs.NE2020

Unsupervised Competitive Hardware Learning Rule for Spintronic Clustering Architecture

Alvaro Velasquez, Christopher H. Bennett, Naimul Hassan +5

We propose a hardware learning rule for unsupervised clustering within a novel spintronic computing architecture. The proposed approach leverages the three-terminal structure of do…

cs.NE2020

Plasticity-Enhanced Domain-Wall MTJ Neural Networks for Energy-Efficient Online Learning

Christopher H. Bennett, T. Patrick Xiao, Can Cui +6

Machine learning implements backpropagation via abundant training samples. We demonstrate a multi-stage learning system realized by a promising non-volatile memory device, the doma…

cs.NE20203 cited

CMOS-Free Multilayer Perceptron Enabled by Four-Terminal MTJ Device

Wesley H. Brigner, Naimul Hassan, Xuan Hu +5

Neuromorphic computing promises revolutionary improvements over conventional systems for applications that process unstructured information. To fully realize this potential, neurom…

physics.app-ph20193 cited

Maximized Lateral Inhibition in Paired Magnetic Domain Wall Racetracks for Neuromorphic Computing

C. Cui, O. G. Akinola, N. Hassan +4

Lateral inhibition is an important functionality in neuromorphic computing, modeled after the biological neuron behavior that a firing neuron deactivates its neighbors belonging to…

physics.app-ph2019

Shape-based Magnetic Domain Wall Drift for an Artificial Spintronic Leaky Integrate-and-Fire Neuron

Wesley H. Brigner, Naimul Hassan, Lucian Jiang-Wei +7

Spintronic devices based on domain wall (DW) motion through ferromagnetic nanowire tracks have received great interest as components of neuromorphic information processing systems.…

physics.app-ph2019

Toggle Spin-Orbit Torque MRAM with Perpendicular Magnetic Anisotropy

Naimul Hassan, Susana P. Lainez-Garcia, Felipe Garcia-Sanchez +1

Spin-orbit torque (SOT) is a promising switching mechanism for magnetic random-access memory (MRAM) as a result of the potential for improved switching speed and energy-efficiency.…