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Georg Daniel Förster

Centre Interdisciplinaire de Nanoscience de Marseille

8 papers hereh-index 8244 citations18 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author5
  • middle author2

Across the 7 of 8 papers where every author was matched, so the position is known.

fields
  • cond-mat.mes-hall4
  • cond-mat.mtrl-sci4
affiliations
  • Centre Interdisciplinaire de Nanoscience de Marseille
same name
  • Georg Daniel Förster — 1 paper

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

activity
20192026
most citedA deep learning approach for determining the chiral indices of carbon nanotubes from high-resolution transmission electron microscopy images

58 citations · 112 across the 8 of their papers we have counts for

collaborators
Showing 2020Show all

3 papers · 1 filter

cond-mat.mes-hall2020★ 17 cited

A Semi-Grand Canonical Kinetic Monte Carlo study of Single-Walled Carbon Nanotubes growth

Georg Daniel Förster, Thomas D. Swinburne, Hua Jiang +2

Single-walled carbon nanotubes exist in a variety of different geometries, so-called chiralities, that define their electronic properties. Chiral selectivity has been reported in c…

cond-mat.mes-hall2020★ 58 cited

A deep learning approach for determining the chiral indices of carbon nanotubes from high-resolution transmission electron microscopy images

G. D. Förster, A. Castan, A. Loiseau +5

Chiral indices determine important properties of carbon nanotubes (CNTs). Unfortunately, their determination from high-resolution transmission electron microscopy (HRTEM) images, t…

cond-mat.mtrl-sci2020★ 6 cited

Depressions by stacking faults in nanorippled graphene on metals

Georg Daniel Förster, Alexandre Artaud, Estelle Mazaleyrat +9

A broad variety of defects has been observed in two-dimensional materials. Many of these defects can be created by top-down methods such as electron irradiation or chemical etching…

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