activity
20162022
most citedGate-tunable van der Waals heterostructure for reconfigurable neural network vision sensor

456 citations · 964 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mes-hall2022

Cascadable in-memory computing based on symmetric writing and read out

Lizheng Wang, Junlin Xiong, Bin Cheng +17

The building block of in-memory computing with spintronic devices is mainly based on the magnetic tunnel junction with perpendicular interfacial anisotropy (p-MTJ). The resulting a…

cond-mat.mes-hall2021★ 1 cited

Temperature-sensitive spatial distribution of defects in PdSe2 flakes

Xiaowei Liu, Yaojia Wang, Qiqi Guo +20

Defect engineering plays an important role in tailoring the electronic transport properties of van der Waals materials. However, it is usually achieved through tuning the type and…

cond-mat.mtrl-sci2020★ 456 cited

Gate-tunable van der Waals heterostructure for reconfigurable neural network vision sensor

Chen-Yu Wang, Shi-Jun Liang, Shuang Wang +18

Early processing of visual information takes place in the human retina. Mimicking neurobiological structures and functionalities of the retina provide a promising pathway to achiev…

cond-mat.mes-hall2018★ 100 cited

Experimental identification of critical condition for drastically enhancing thermoelectric power factor of two-dimensional layered materials

Junwen Zeng, Xin He, Shi-Jun Liang +16

Nano-structuring is an extremely promising path to high performance thermoelectrics. Favorable improvements in thermal conductivity are attainable in many material systems, and the…

cond-mat.mtrl-sci2018★ 94 cited

Low-Temperature Eutectic Synthesis of PtTe2 with Weak Antilocalization and Controlled Layer Thinning

Song Hao, Junwen Zeng, Tao Xu +20

Metallic transition metal dichalcogenides (TMDs) have exhibited various exotic physical properties and hold the promise of novel optoelectronic and topological devices applications…

cond-mat.mes-hall2018★ 32 cited

Analog Circuit Applications based on Ambipolar Graphene/MoTe2 Vertical Transistors

Chen Pan, Yajun Fu, Jiaxin Wang +12

The current integrated circuit (IC) technology based on conventional MOS-FET (metal-oxide-semiconductor field-effect transistor) is approaching the limit of miniaturization with in…

cond-mat.mes-hall2016★ 281 cited

Gate-Tunable Negative Longitudinal Magnetoresistance in the Predicted Type-II Weyl Semimetal WTe2

Yaojia Wang, Erfu Liu, Huimei Liu +13

The progress in exploiting new electronic materials and devices has been a major driving force in solid-state physics. As a new state of matter, a Weyl semimetal (WSM), particularl…