Synthesis of strain-relaxed Ge-Sn alloys using ion implantation and pulsed laser melting

Tuan T. Tran, Quentin Hudspeth, Yining Liu +6

Ge-Sn alloys with a sufficiently high concentration of Sn is a direct bandgap group IV material. Recently, ion implantation followed by pulsed laser melting has been shown to be a…