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Resonance and antiresonance in Raman scattering in GaSe and InSe crystals
M. Osiekowicz, D. Staszczuk, K. Olkowska-Pucko +9
The temperature effect on the Raman scattering efficiency is investigated in -GaSe and -InSe crystals. We found that varying the temperature over a broad range from…
Photoluminescence dynamics in few-layer InSe
Tommaso Venanzi, Himani Arora, Stephan Winnerl +10
We study the optical properties of thin flakes of InSe encapsulated in hBN. More specifically, we investigate the photoluminescence (PL) emission and its dependence on sample thick…
Interlayer band-to-band tunneling and negative differential resistance in van der Waals BP/InSe field effect transistors
Quanshan Lv, Faguang Yan, Nobuya Mori +6
Atomically thin layers of van der Waals (vdW) crystals offer an ideal material platform to realize tunnel field effect transistors (TFETs) that exploit the tunneling of charge carr…