99 citations · 168 across the 13 of their papers we have counts for
13 papers
Face-to-face anneal temperature controls lattice parameter in Ta(C,N) virtual substrates for AlGaN power electronics
Noah Zahn, Julia L. Martin, Michelle A. Smeaton +3
Tantalum carbide (TaC) thin film ''virtual'' substrates are a highly desirable material for vertical power electronics devices due to latti…
Enhanced thermal conductivity of (010) (AlxGa1-x)2O3 epitaxial films utilizing indium-catalyzed molecular beam epitaxy
Shivashree Gowda, Stephen Schaefer, Ethan A. Scott +3
(AlxGa1-x)2O3/beta-Ga2O3 transistors are an emerging candidate for high-power and high-frequency electronic devices. beta-Ga2O3 in particular is notably limited for anisotropic low…
Revealing epitaxial relationships at GaO interfaces with p-type oxides
Anna Sacchi, Krishna Acharya, Michelle A. Smeaton +5
p-type oxide contact layers such as CrO and NiO are attracting increasing interest in pn-heterojunctions with n-type monoclinic -GaO for high-power electronic de…
Low resistance NiO/β-Ga_{2}O_{3} heterojunction diodes grown via molecular beam epitaxy
Dagny Sacksteder, Anna Sacchi, Renae Gannon +4
NiO is one of the most important p-type oxide contact materials used in many semiconductor technologies. However, current NiO growth methods can induce interfacial damage that dimi…
Revealing the Atomic Structure of NiO/GaO Interfaces
Michelle A. Smeaton, Krishna Acharya, Anna Sacchi +5
NiO/GaO heterojunctions have garnered significant attention for use in power electronics due to the ultrawide bandgap and wafer-scale availability of GaO an…
Fast Homoepitaxy on (100) \b{eta}-Ga2O3 Substrates with Large Grown-In Offcut
M. Brooks Tellekamp, Drew Haven, David Joyce +7
The choice of crystalline orientation and offcut angle is non-trivial for low-symmetry , where anisotropy impacts bulk and thin film synthesis, material pr…