99 citations · 168 across the 13 of their papers we have counts for
13 papers
Face-to-face anneal temperature controls lattice parameter in Ta(C,N) virtual substrates for AlGaN power electronics
Noah Zahn, Julia L. Martin, Michelle A. Smeaton +3
Tantalum carbide (TaC) thin film ''virtual'' substrates are a highly desirable material for vertical power electronics devices due to latti…
Enhanced thermal conductivity of (010) (AlxGa1-x)2O3 epitaxial films utilizing indium-catalyzed molecular beam epitaxy
Shivashree Gowda, Stephen Schaefer, Ethan A. Scott +3
(AlxGa1-x)2O3/beta-Ga2O3 transistors are an emerging candidate for high-power and high-frequency electronic devices. beta-Ga2O3 in particular is notably limited for anisotropic low…
Revealing epitaxial relationships at GaO interfaces with p-type oxides
Anna Sacchi, Krishna Acharya, Michelle A. Smeaton +5
p-type oxide contact layers such as CrO and NiO are attracting increasing interest in pn-heterojunctions with n-type monoclinic -GaO for high-power electronic de…
Low resistance NiO/β-Ga_{2}O_{3} heterojunction diodes grown via molecular beam epitaxy
Dagny Sacksteder, Anna Sacchi, Renae Gannon +4
NiO is one of the most important p-type oxide contact materials used in many semiconductor technologies. However, current NiO growth methods can induce interfacial damage that dimi…
Revealing the Atomic Structure of NiO/GaO Interfaces
Michelle A. Smeaton, Krishna Acharya, Anna Sacchi +5
NiO/GaO heterojunctions have garnered significant attention for use in power electronics due to the ultrawide bandgap and wafer-scale availability of GaO an…
Fast Homoepitaxy on (100) \b{eta}-Ga2O3 Substrates with Large Grown-In Offcut
M. Brooks Tellekamp, Drew Haven, David Joyce +7
The choice of crystalline orientation and offcut angle is non-trivial for low-symmetry , where anisotropy impacts bulk and thin film synthesis, material pr…
Designing low-cost TaC virtual substrates for epitaxy
Dennice M. Roberts, Andrew Norman, Moira K. Miller +1
is a critical ultra-wide bandgap material for optoelectronics, but the deposition of thick, high quality epitaxial layers has been hindered by a lack of lattice-mat…
Composition dependent electrochemical properties of earth-abundant ternary nitride anodes
M Brooks Tellekamp, Anna Osella, Karen N Heinselman +2
Growing energy storage demands on lithium-ion batteries necessitate exploration of new electrochemical materials as next-generation battery electrode materials. In this work, we in…
Gallium Oxide Heterojunction Diodes for Improved High-Temperature Performance
Shahadat H. Sohel, Ramchandra Kotecha, Imran S Khan +4
-GaO based semiconductor devices are expected to have significantly improved high-power and high-temperature performance due to its ultra-wide bandgap of close to 5…
Ternary Nitride Materials: Fundamentals and Emerging Device Applications
Ann L. Greenaway, Celeste L. Melamed, M. Brooks Tellekamp +4
Interest in inorganic ternary nitride materials has grown rapidly over the past few decades, as their diversity of chemistries and structures make them appealing for a variety of a…
Growth and Characterization of Homoepitaxial -GaO Layers
M. Brooks Tellekamp, Karen N. Heinselman, Steve Harvey +2
-GaO is a next-generation ultra wide bandgap semiconductor (E = 4.8 eV to 4.9 eV) that can be homoepitaxially grown on commercial substrates, enabling next-generatio…
Heteroepitaxial integration of ZnGeN2 on GaN buffers using molecular beam epitaxy
M. Brooks Tellekamp, Celeste L. Melamed, Andrew G. Norman +1
Recently theorized hybrid II-IV-N{_2} / III-N heterostructures, based on current commercialized (In,Ga)N devices, are predicted to significantly advance the design space of highly…
Blue-Green Emission from Epitaxial Yet Cation-Disordered ZnGeNO
C. L. Melamed, M. B. Tellekamp, J. S. Mangum +4
ZnGeN offers a low-cost alternative to InGaN with the potential for bandgap tuning to span the green gap using cation site ordering. The addition of oxygen on the anion site cr…