43 citations · 56 across the 2 of their papers we have counts for
4 papers
Low Temperature Growth of Graphene on Semiconductor
Håkon I. Røst, Rajesh K. Chellappan, Frode S. Strand +13
The industrial realization of graphene has so far been limited by challenges related to the quality, reproducibility, and high process temperatures required to manufacture graphene…
Magnesium-intercalated graphene on SiC: highly n-doped air-stable bilayer graphene at extreme displacement fields
Antonija Grubišić-Čabo, Jimmy C. Kotsakidis, Yuefeng Yin +12
We use angle-resolved photoemission spectroscopy to investigate the electronic structure of bilayer graphene at high n-doping and extreme displacement fields, created by intercalat…
Freestanding n-Doped Graphene via Intercalation of Calcium and Magnesium into the Buffer Layer - SiC(0001) Interface
Jimmy C. Kotsakidis, Antonija Grubišić-Čabo, Yuefeng Yin +12
The intercalation of epitaxial graphene on SiC(0001) with Ca has been studied extensively, yet precisely where the Ca resides remains elusive. Furthermore, the intercalation of Mg…
Electronic bandstructure of in-plane ferroelectric van der Waals
James L. Collins, Chutian Wang, Anton Tadich +11
Layered indium selenides () have recently been discovered to host robust out-of-plane and in-plane ferroelectricity in the and ' phases, respectively. In this…