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20202026
most citedFeCAM: A Universal Compact Digital and Analog Content Addressable Memory Using Ferroelectric

133 citations · 166 across the 6 of their papers we have counts for

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cond-mat.mes-hall2021★ 18 cited

Computational Associative Memory with Amorphous InGaZnO Channel 3D NAND-Compatible FG Transistors

Chen Sun, Chao Li, Subhranu Samanta +11

3D NAND enables continuous NAND density and cost scaling beyond conventional 2D NAND. However, its poly-Si channel suffers from low mobility, large device variations, and instabili…