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20012009
most citedCharacterization of high-temperature PbTe p-n junctions prepared by thermal diffusion and by ion-implantation

13 citations · 21 across the 8 of their papers we have counts for

collaborators

8 papers

cond-mat.other2009★ 2 cited

Thermal Wave Induced Edge Electrical Field of Pyroelectric: Spatial Pattern Mapping and Effect of Ambient Conditions

A. V. Butenko, V. Sandomirsky, G. Chaniel +4

We have recently analyzed theoretically the main characteristics of the edge depolarizing electric field (EDEF), in the vicinity of a non-polar face of a pyroelectric. In this work…

cond-mat.other2009

Enhancement of Voltage, Ion current and Neutron Yield in Pyroelectric Accelerators

V. Sandomirsky, A. V. Butenko, Y. Schlesinger +1

Utilization of current pyroelectric accelerators (PEA) is limited due to low ion current and neutron generation yields. Current design, using pyroelectrics (PE) with high pyrocoeff…

cond-mat.other2008

Experimental and Theoretical Investigation of the Barrier Pyroelectric Effect in a Quantum Paraelectric Semiconductor

A. V. Butenko, V. Sandomirsky, R. Kahatabi +4

We describe here the first comprehensive investigation of a pyroelectric response of a p-n junction in a non-polar paraelectric semiconductor. The pyroelectric effect is generated…

cond-mat.other2007

Pyroelectric Effect Induced by the Built-in Field in the p-n Junction of the Quantum Paraelectric PbTe: Experimental Study

A. V. Butenko, V. Sandomirsky, R. Kahatabi +3

We report here the first observation of a pyroelectric effect in a non-polar semiconductor. This effect originates in the temperature dependent electric dipole of the p-n junction.…

cond-mat.other2007★ 13 cited

Characterization of high-temperature PbTe p-n junctions prepared by thermal diffusion and by ion-implantation

A. V. Butenko, R. Kahatabi, E. Mogilko +6

We describe here the characteristics of two types of high-quality PbTe p-n-junctions, prepared in this work: (1) by thermal diffusion of In4Te3 gas (TDJ), and (2) by ion implantati…

cond-mat.other2006★ 2 cited

Electric Field Effect Analysis of Thin PbTe films on high-epsilon SrTiO3 Substrate

A. V. Butenko, R. Kahatabi, V. Sandomirsky +3

Thin PbTe films (thickness 500 - 600 angstrom), deposited on SrTiO3, have been investigated by electric field effect (EFE). The high resistivity of such thin films warrants a high…