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physics.app-ph2023
Manipulation of the electrical and memory properties of MoS field-effect transistors by highly charged ion irradiation
Stephan Sleziona, Aniello Pelella, Enver Faella +6
Field-effect transistors based on molybdenum disulfide (MoS) exhibit a hysteresis in their transfer characteristics, which can be utilized to realize 2D memory devices. This hy…
physics.app-ph2020
Electron irradiation of metal contacts in monolayer MoS Field-Effect Transistors
A. Pelella, O. Kharsah, A. Grillo +9
This work deals with the electron beam irradiation of the Schottky metal contacts in monolayer molybdenum disulfide (MoS) field-effect transistors (FETs). We show that the expo…