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Field-free switching of perpendicular magnetic tunnel junction by the interplay of spin orbit and spin transfer torques
Mengxing Wang, Wenlong Cai, Daoqian Zhu +11
Spin-orbit torque and spin-transfer torque are leading the pathway to the future of spintronic memories. However, both of the mechanisms are suffering from intrinsic limitations. I…
Experimental observation of bulk nodal lines and electronic surface states in ZrB
Rui Lou, Pengjie Guo, Man Li +14
Topological nodal-line semimetals are characterized by the line-contact bulk band crossings and the topological surface states. Breaking certain protecting symmetry turns this syst…
Field-Free Switching of Perpendicular Magnetic Tunnel Junction via Voltage-Gated Spin Hall Effect for Low-Power Spintronic Memory
Shouzhong Peng, Xiang Li, Wang Kang +7
Spin Hall effect (SHE) and voltage-controlled magnetic anisotropy (VCMA) are two promising methods for low-power electrical manipulation of magnetization. Recently, magnetic field-…
Skyrmions in magnetic tunnel junctions
Xueying Zhang, Wenlong Cai, Xichao Zhang +10
In this work, we demonstrate that skyrmions can be nucleated in the free layer of a magnetic tunnel junction (MTJ) with Dzyaloshinskii-Moriya interactions (DMI) by a spin-polarized…
Tunneling magnetoresistance enhancement by symmetrization in spin-orbit torque magnetic tunnel junction
Jiaqi Zhou, Weisheng Zhao, Kaihua Cao +3
Heavy metals with strong spin-orbit coupling (SOC) have been employed to generate spin current to control the magnetization dynamics by spin-orbit torque (SOT). Magnetic tunnel jun…