1.2k citations · 4.2k across the 17 of their papers we have counts for
4 papers · 1 filter
Field-free spin orbit torque switching of synthetic antiferromagnet through interlayer Dzyaloshinskii-Moriya interaction
Zilu Wang, Pingzhi Li, Yuxuan Yao +6
Perpendicular synthetic antiferromagnets (SAFs) are of interest for the next generation ultrafast, high density spintronic memory and logic devices. However, to energy efficiently…
Field-free switching of perpendicular magnetic tunnel junction by the interplay of spin orbit and spin transfer torques
Mengxing Wang, Wenlong Cai, Daoqian Zhu +11
Spin-orbit torque and spin-transfer torque are leading the pathway to the future of spintronic memories. However, both of the mechanisms are suffering from intrinsic limitations. I…
Field-Free Switching of Perpendicular Magnetic Tunnel Junction via Voltage-Gated Spin Hall Effect for Low-Power Spintronic Memory
Shouzhong Peng, Xiang Li, Wang Kang +7
Spin Hall effect (SHE) and voltage-controlled magnetic anisotropy (VCMA) are two promising methods for low-power electrical manipulation of magnetization. Recently, magnetic field-…
Tuning the Dzyaloshinskii-Moriya Interaction in Pt/Co/MgO heterostructures through MgO thickness
Anni Cao, Xueying Zhang, Bert Koopmans +6
The interfacial Dzyaloshinskii-Moriya interaction (DMI) in the ferromagnetic/heavy metal ultra-thin film structures , has attracted a lot of attention thanks to its capability to s…