192 citations · 1k across the 17 of their papers we have counts for
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cond-mat.mes-hall2018★ 8 cited
Engineering Topological quantum dot through planar magnetization in bismuthene
Jiaojiao Zhou, Tong Zhou, Shu-guang Cheng +2
The discovery of quantum spin Hall materials with huge bulk gaps in experiment, such as bismuthene, provides a versatile platform for topological devices. We propose a topological…
cond-mat.mes-hall2018★ 65 cited
Giant Spin-valley Polarization and Multiple Hall Effect in Functionalized Bi Monolayers
Tong Zhou, Jiayong Zhang, Hua Jiang +2
Valleytronic materials, characterized by local extrema (valley) in their bands, and topological insulators have separately attracted great interest recently. However, the interplay…