Carbon doping of GaN: Proof of the formation of electrically active tri-carbon defects

Ivan Gamov, Eberhard Richter, Markus Weyers +10

Carbon doping is used to obtain semi-insulating GaN crystals. If the carbon doping concentration exceeds $5\ast 10^{17}$ $c{m}^{-3}$, the carbon atoms increasingly form triatomic cluster…