most citedCarbon doping of GaN: Proof of the formation of electrically active tri-carbon defects

18 citations · 24 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mtrl-sci2022★ 6 cited

Fingerprints of carbon defects in vibrational spectra of gallium nitride (GaN) consider-ing the isotope effect

I. Gamov, J. L. Lyons, G. Gärtner +5

This work examines the carbon defects associated with recently reported and novel peaks of infrared (IR) absorption and Raman scattering appearing in GaN crystals at carbon ($^{12}…

cond-mat.mtrl-sci2020★ 18 cited

Carbon doping of GaN: Proof of the formation of electrically active tri-carbon defects

Ivan Gamov, Eberhard Richter, Markus Weyers +10

Carbon doping is used to obtain semi-insulating GaN crystals. If the carbon doping concentration exceeds , the carbon atoms increasingly form triatomic cluster…