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I. Gamov

2 papers here

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author position
  • first author1

Across the 1 of 2 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci2

identity via Semantic Scholar / OpenAlex

most citedCarbon doping of GaN: Proof of the formation of electrically active tri-carbon defects

18 citations · 32 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mtrl-sci2021★ 14 cited

Photochromism and influence of point defect charge states on optical absorption in aluminum nitride (AlN)

Ivan Gamov, Carsten Hartmann, Thomas Straubinger +1

In this work, we study the absorption properties of AlN in the range of 1.5 - 5.5 eV, as well as the meta-stable change in absorption induced by ultraviolet (UV) irradiation (photo…

cond-mat.mtrl-sci2020★ 18 cited

Carbon doping of GaN: Proof of the formation of electrically active tri-carbon defects

Ivan Gamov, Eberhard Richter, Markus Weyers +10

Carbon doping is used to obtain semi-insulating GaN crystals. If the carbon doping concentration exceeds 5∗1017 cm−3, the carbon atoms increasingly form triatomic cluster…

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