53 citations · 111 across the 8 of their papers we have counts for
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cond-mat.mtrl-sci2017★ 6 cited
Dopant-Dopant Interactions in Beryllium doped Indium Gallium Arsenide: an Ab Initio Study
Vadym Kulish, Wenyuan Liu, Francis Benistant +1
We present an ab initio study of dopant-dopant interactions in beryllium-doped InGaAs. We consider defect formation energies of various interstitial and substitutional defects and…
cond-mat.mtrl-sci2016★ 5 cited
Grown-in beryllium diffusion in indium gallium arsenide: An ab initio, continuum theory and kinetic Monte Carlo study
Wenyuan Liu, Mahasin Alam Sk, Sergei Manzhos +3
A roadblock in utilizing InGaAs for scaled-down electronic devices is its anomalous dopant diffusion behavior; specifically, existing models are not able to explain available exper…