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20182020
most cited2-D materials for ultra-scaled field-effect transistors: hundred candidates under the ab initio microscope

86 citations · 183 across the 3 of their papers we have counts for

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cond-mat.mes-hall2020★ 34 cited

Ab initio simulation of band-to-band tunneling FETs with single- and few-layer 2-D materials as channels

Áron Szabó Cedric Klinkert, Davide Campi, Christian Stieger +2

Full-band atomistic quantum transport simulations based on first principles are employed to assess the potential of band-to-band tunneling FETs (TFETs) with a 2-D channel material…

cond-mat.mes-hall2020★ 86 cited

2-D materials for ultra-scaled field-effect transistors: hundred candidates under the ab initio microscope

Cedric Klinkert, Áron Szabó, Christian Stieger +3

Thanks to their unique properties single-layer 2-D materials appear as excellent candidates to extend Moore's scaling law beyond the currently manufactured silicon FinFETs. However…