86 citations · 130 across the 4 of their papers we have counts for
3 papers · 1 filter
Field-Effect Transistors based on 2-D Materials: a Modeling Perspective
Mathieu Luisier, Cedric Klinkert, Sara Fiore +4
Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D…
Ab initio simulation of band-to-band tunneling FETs with single- and few-layer 2-D materials as channels
Áron Szabó Cedric Klinkert, Davide Campi, Christian Stieger +2
Full-band atomistic quantum transport simulations based on first principles are employed to assess the potential of band-to-band tunneling FETs (TFETs) with a 2-D channel material…
2-D materials for ultra-scaled field-effect transistors: hundred candidates under the ab initio microscope
Cedric Klinkert, Áron Szabó, Christian Stieger +3
Thanks to their unique properties single-layer 2-D materials appear as excellent candidates to extend Moore's scaling law beyond the currently manufactured silicon FinFETs. However…