18 citations · 18 across the 2 of their papers we have counts for
3 papers
Simulation of lateral ion migration during electroforming process
Jingjia Meng, Enkui Lian, Jonathan D. Poplawsky +1
Non-volatile memory devices have received a lot of interest in both industry and academia in the last decade. Transition metal oxide-based memories offer potential applications as…
Temperature overshoot as the cause of physical changes in resistive switching devices during electro-formation
Jingjia Meng, Bingyuan Zhao, Jonathan M. Goodwill +2
Resistive switching devices based on transition metal oxides require formation of a conductive filament in order for the device to be able to switch. Such filaments have been propo…
Topographic and electronic structure of cleaved SrTiO3(001) surfaces
Wattaka Sitaputra, Marek Skowronski, Randall M. Feenstra
The topographic and electronic structure of cleaved SrTiO3(001) surfaces were studied, employing samples that either had or had not been coated with Ti on their outer surfaces prio…