18 citations · 21 across the 2 of their papers we have counts for
2 papers
physics.app-ph2020★ 18 cited
Temperature overshoot as the cause of physical changes in resistive switching devices during electro-formation
Jingjia Meng, Bingyuan Zhao, Jonathan M. Goodwill +2
Resistive switching devices based on transition metal oxides require formation of a conductive filament in order for the device to be able to switch. Such filaments have been propo…
cs.IT2016★ 3 cited
Locally rewritable codes for resistive memories
Yongjune Kim, Abhishek A. Sharma, Robert Mateescu +4
We propose locally rewritable codes (LWC) for resistive memories inspired by locally repairable codes (LRC) for distributed storage systems. Small values of repair locality of LRC…