18 citations · 18 across the 1 of their papers we have counts for
2 papers
physics.app-ph2020★ 18 cited
Temperature overshoot as the cause of physical changes in resistive switching devices during electro-formation
Jingjia Meng, Bingyuan Zhao, Jonathan M. Goodwill +2
Resistive switching devices based on transition metal oxides require formation of a conductive filament in order for the device to be able to switch. Such filaments have been propo…
cs.IT2016
Locally rewritable codes for resistive memories
Yongjune Kim, Abhishek A. Sharma, Robert Mateescu +4
We propose locally rewritable codes (LWC) for resistive memories inspired by locally repairable codes (LRC) for distributed storage systems. Small values of repair locality of LRC…