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cond-mat.mtrl-sci2021
Doubling the mobility of InAs/InGaAs selective area grown nanowires
Daria V. Beznasyuk, Sara Martí-Sánchez, Jung-Hyun Kang +12
Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics and quantum devices based on III-V semiconductor materials. The potenti…
cond-mat.mes-hall2021
Multiterminal Quantized Conductance in InSb Nanocrosses
Sabbir A. Khan, Lukas Stampfer, Timo Mutas +3
By studying the time-dependent axial and radial growth of InSb nanowires, we map the conditions for the synthesis of single-crystalline InSb nanocrosses by molecular beam epitaxy.…