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Temperature-induced topological phase transition in HgTe quantum wells
A. M. Kadykov, S. S. Krishtopenko, B. Jouault +9
We report a direct observation of temperature-induced topological phase transition between trivial and topological insulator in HgTe quantum well. By using a gated Hall bar device,…
Temperature-driven massless Kane fermions in HgCdTe crystals: verification of universal velocity and rest-mass description
F. Teppe, M. Marcinkiewicz, S. S. Krishtopenko +15
It has recently been shown that the electronic states in bulk gapless HgCdTe offer another realization of pseudo-relativistic three-dimensional particles in a condensed matter syst…
Terahertz detection in a slit-grating-gate field-effect-transistor structure
D. M. Yermolayev, K. M. Maremyanin, D. V. Fateev +6
We have fabricated a grating-gate InGaAs/GaAs field-effect transistor structure with narrow slits between the grating gate fingers. The resonant photoconductive response of this st…