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20112021
most citedTraining and Operation of an Integrated Neuromorphic Network Based on Metal-Oxide Memristors

3k citations · 3.7k across the 11 of their papers we have counts for

collaborators

12 papers

cs.ET2021★ 2 cited

Implementation of a Binary Neural Network on a Passive Array of Magnetic Tunnel Junctions

Jonathan M. Goodwill, Nitin Prasad, Brian D. Hoskins +9

The increasing scale of neural networks and their growing application space have produced demand for more energy- and memory-efficient artificial-intelligence-specific hardware. Av…

cond-mat.mtrl-sci2021★ 99 cited

Computing and Memory Technologies based on Magnetic Skyrmions

Hamed Vakili, Wei Zhou, Chung T Ma +13

Solitonic magnetic excitations such as domain walls and, specifically, skyrmionics enable the possibility of compact, high density, ultrafast,all-electronic, low-energy devices, wh…

cs.LG2020★ 2 cited

Memory-efficient training with streaming dimensionality reduction

Siyuan Huang, Brian D. Hoskins, Matthew W. Daniels +2

The movement of large quantities of data during the training of a Deep Neural Network presents immense challenges for machine learning workloads. To minimize this overhead, especia…

cs.LG2019★ 16 cited

Streaming Batch Eigenupdates for Hardware Neuromorphic Networks

Brian D. Hoskins, Matthew W. Daniels, Siyuan Huang +5

Neuromorphic networks based on nanodevices, such as metal oxide memristors, phase change memories, and flash memory cells, have generated considerable interest for their increased…

cs.ET2018★ 4 cited

A scalable method to find the shortest path in a graph with circuits of memristors

Alice Mizrahi, Thomas Marsh, Brian Hoskins +1

Finding the shortest path in a graph has applications to a wide range of optimization problems. However, algorithmic methods scale with the size of the graph in terms of time and e…

cond-mat.mtrl-sci2018

In aqua electrochemistry probed by XPEEM: experimental setup, examples, and challenges

Slavomír Nemšák, Evgheni Strelcov, Hongxuan Guo +8

Recent developments in environmental and liquid cells equipped with electron transparent graphene windows have enabled traditional surface science spectromicroscopy tools, such as…

cond-mat.mtrl-sci2017★ 47 cited

Stateful characterization of resistive switching TiO2 with electron beam induced currents

Brian D. Hoskins, Gina C. Adam, Evgheni Strelcov +4

Metal oxide resistive switches are increasingly important as possible artificial synapses in next generation neuromorphic networks. Nevertheless, there is still no codified set of…

cs.ET2015★ 1 cited

Three-Dimensional Stateful Material Implication Logic

Gina C. Adam, Brian D. Hoskins, Mirko Prezioso +1

Monolithic three-dimensional integration of memory and logic circuits could dramatically improve performance and energy efficiency of computing systems. Some conventional and emerg…

cond-mat.other2015★ 9 cited

Self-Adaptive Spike-Time-Dependent Plasticity of Metal-Oxide Memristors

M. Prezioso, F. Merrikh-Bayat, B. Hoskins +2

Metal-oxide memristors have emerged as promising candidates for hardware implementation of artificial synapses - the key components of high-performance, analog neuromorphic network…

cs.ET2014★ 3k cited

Training and Operation of an Integrated Neuromorphic Network Based on Metal-Oxide Memristors

Mirko Prezioso, Farnood Merrikh-Bayat, Brian Hoskins +3

Despite all the progress of semiconductor integrated circuit technology, the extreme complexity of the human cerebral cortex makes the hardware implementation of neuromorphic netwo…

cond-mat.mtrl-sci2014★ 61 cited

Phenomenological Modeling of Memristive Devices

Farnood Merrikh-Bayat, Brian Hoskins, Dmitri B. Strukov

We present a computationally inexpensive yet accurate phenomenological model of memristive behavior in titanium dioxide devices by fitting experimental data. By design, the model p…

cond-mat.mtrl-sci2011★ 504 cited

High-Precision Tuning of State for Memristive Devices by Adaptable Variation-Tolerant Algorithm

Fabien Alibart, Ligang Gao, Brian Hoskins +1

Using memristive properties common for the titanium dioxide thin film devices, we designed a simple write algorithm to tune device conductance at a specific bias point to 1% relati…